In modern VLSI technologies, device electrical characteristics are sensitive to structural details and therefore to fabrication techniques. How are advanced VLSI devices designed and what future changes are likely? What are the implications for device electrical performance caused by fabrication techniques? Physical models for nanometer scale structures, control of electrical characteristics (threshold voltage, short channel effects, ballistic transport) in small structures, and alternative device structures for VLSI.
3 units · Letter (ABCD/NP)
In modern VLSI technologies, device electrical characteristics are sensitive to structural details and therefore to fabrication techniques. How are advanced VLSI devices designed and what future changes are likely? What are the implications for device electrical performance caused by fabrication techniques? Physical models for nanometer scale structures, control of electrical characteristics (threshold voltage, short channel effects, ballistic transport) in small structures, and alternative device structures for VLSI.
Offered in Winter 2027 at Stanford University.