Stanford Root

Schedule

Stanford Root

Schedule

EE 312

Integrated Circuit Fabrication Laboratory

UNITS:3-4
GRADING:Letter (ABCD/NP)
LEVEL:Graduate
GER:—

Fabrication, simulation, and testing of a submicron CMOS process. Students will be learning practical aspects of IC fabrication through experiments in the cleanroom including silicon wafer cleaning, photolithography, etching, oxidation, diffusion, ion implantation, chemical vapor deposition, physical sputtering, and electrical testing. Students also simulate the CMOS process using process simulator Sentaurus of the structures and electrical parameters that should result from the process flow. Cleanroom work will be performed in the Stanford Nanofabrication Facility (SNF). Preference to students pursuing doctoral research program requiring SNF facilities. Enrollment limited to EE 12. Please fill out this form to apply: https://forms.gle/FY8YFcnu3Xasugra8

Syllabus for selected term:
View Spring 2027 Syllabus

Sections

1 Term
Laboratory 1Open
ID: 28433
0 / 28 enrolled
DAYS:Tuesday, Thursday
TIME:10:30 AM – 11:50 AM
LOCATION:TBD
units

EE 312: Integrated Circuit Fabrication Laboratory

3-4 units · Letter (ABCD/NP)

Fabrication, simulation, and testing of a submicron CMOS process. Students will be learning practical aspects of IC fabrication through experiments in the cleanroom including silicon wafer cleaning, photolithography, etching, oxidation, diffusion, ion implantation, chemical vapor deposition, physical sputtering, and electrical testing. Students also simulate the CMOS process using process simulator Sentaurus of the structures and electrical parameters that should result from the process flow. Cleanroom work will be performed in the Stanford Nanofabrication Facility (SNF). Preference to students pursuing doctoral research program requiring SNF facilities. Enrollment limited to 12. Please fill out this form to apply: https://forms.gle/FY8YFcnu3Xasugra8

Offered in Spring 2027 at Stanford University.

Spring 2027 sections

  • Laboratory — Tuesday Thursday 10:30 AM – 11:50 AM (Graduate)

More EE courses

  • EE 303: Autonomous Implantable Systems
  • EE 308: Advanced Circuit Techniques
  • EE 309A: Semiconductor Memory Devices and Circuit Design
  • EE 309B: Emerging Non-Volatile Memory Devices and Circuit Design
  • EE 310: SystemX: Ubiquitous Sensing, Computing and Communication Seminar
  • EE 311: Advanced Integrated Circuits Technology
  • EE 314A: RF Integrated Circuit Design
  • EE 315: Analog-Digital Interface Circuits
  • EE 316: Advanced VLSI Devices
  • EE 317: Special Topics on Wide Bandgap Materials and Devices
  • EE 323: Energy in Electronics
  • EE 329: The Electronic Structure of Surfaces and Interfaces (PHOTON 329)

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